Semiconductor device and wafer

A semiconductor device comprising:

• a substrate having an upper surface and a lower surface;
• a metal layer provided on the lower surface of the substrate;
• and
• a semiconductor element on the upper surface the semiconductor element including:
• a plurality of drain fingers provided on the upper surface of the substrate;
• a plurality of source fingers provided on the upper surface of the substrate and alternately arranged with the plurality of drain fingers in a first direction, each of the plurality of source fingers being electrically separated from each other on the upper surface and each connected to the metal layer by a respective through hole penetrating the substrate;
• a plurality of gate fingers provided on the upper surface of the substrate, each gate finger being sandwiched between one of the plurality of source fingers and one of the plurality of drain fingers;
• a first pad provided on the upper surface of the substrate and to which the plurality of gate fingers are connected;
• and
• a second pad provided on the upper surface of the substrate and to which the plurality of drain fingers are connected;
• and
• a protective film provided on the upper surface of the substrate to cover the plurality of source fingers, the plurality of gate fingers, and the plurality of drain fingers, the protective film, having a first opening that exposes at least a part of the first pad and a second opening that exposes at least a part of the second pad, and having no opening that overlaps any of the plurality of source fingers or any of the plurality of drain fingers,
• wherein a needle mark is provided on an upper surface of the first pad in the first opening and the second pad in the second opening, and no needle mark is provided on the upper surface of the source fingers.