H10D 64/254
For lateral devices wherein the source or drain electrodes extend entirely through
Official title: {for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts}
H10D64/254 (For lateral devices wherein the source or drain electrodes extend entirely through) appears on 989 US grants and 1,399 published applications in this corpus.
Search patents in H10D- Granted patents
- 989
- Published applications
- 1,399
- Assignees
- 262
- Inventors
- 2,081
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 5 | 0 |
| 1998 | 10 | 0 |
| 1999 | 7 | 0 |
| 2000 | 9 | 0 |
| 2001 | 8 | 3 |
| 2002 | 9 | 17 |
| 2003 | 17 | 10 |
| 2004 | 19 | 21 |
| 2005 | 13 | 31 |
| 2006 | 26 | 28 |
| 2007 | 13 | 24 |
| 2008 | 18 | 22 |
| 2009 | 19 | 21 |
| 2010 | 16 | 30 |
| 2011 | 30 | 48 |
| 2012 | 31 | 36 |
| 2013 | 40 | 39 |
| 2014 | 37 | 57 |
| 2015 | 63 | 76 |
| 2016 | 64 | 64 |
| 2017 | 66 | 70 |
| 2018 | 57 | 44 |
| 2019 | 55 | 54 |
| 2020 | 52 | 51 |
| 2021 | 31 | 44 |
| 2022 | 42 | 92 |
| 2023 | 49 | 82 |
| 2024 | 36 | 114 |
| 2025 | 73 | 195 |
| 2026 | 49 | 126 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Wrap around backside source/drain contact6 Oct 2026US 12,757,469 B2International Business Machines Corporation
- Transistor contacts and methods of forming thereof22 Sep 2026US 12,745,461 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure with extended backside connections15 Sep 2026US 12,740,125 B2International Business Machines Corporation
- Method of manufacturing FinFET devices with backside power rail and backside self-aligned via25 Aug 2026US 12,720,795 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Field plates for integrated circuits25 Aug 2026US 12,720,833 B2Texas Instruments Incorporated
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Backside contact to devices with wide source/drain regions8 Oct 2026US 2026/0314042 A1Intel Corporation
- Semiconductor devices8 Oct 2026US 2026/0314043 A1Samsung Electronics Co., Ltd.
- Standard cell architecture with frontside and backside connections1 Oct 2026US 2026/0304894 A1Intel Corporation
- Semiconductor structure and method for forming the same1 Oct 2026US 2026/0304943 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Power FET with embedded body pickup168US 7,315,052 B2Micrel, Inc. · 2008
- Transistor level interconnection methodologies utilizing 3D interconnects162US 10,991,804 B2Xcelsis Corporation · 2021
- Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection114US 6,048,772 AXemod, Inc. · 2000
- Method of forming vias in silicon carbide and resulting devices and circuits112US 7,125,786 B2Cree, Inc. · 2006
- Trench-gate LDMOS structures112US 7,576,388 B1Fairchild Semiconductor Corporation · 2009