Semiconductor structure with extended backside connections

Abstract

A semiconductor structure with extended backside connections is provided. In one embodiment, the semiconductor structure includes a set of backside source/drain contacts, wherein the set of backside source/drain contacts include a first backside source/drain contact, a second backside source/drain contact, and a third backside source/drain contact, a gate that includes a gate extension region, power rail connections that include a signal wire connection in contact with the gate extension region and a first interlayer dielectric, wherein the gate extension region extends from the gate to the signal wire connection, and wherein the signal wire connection is electrically isolated from the second backside source/drain contact and the third backside source/drain contact, and signal wire spacers disposed on sides of the signal wire connection, wherein the signal wire spacers are in contact with the first interlayer dielectric, an extended interlayer dielectric, the second backside source/drain contact, and the third backside source/drain contact.

Dependencies are inferred from the claim text.