H10D 64/252
For vertical or pseudo-vertical devices
Official title: {for vertical or pseudo-vertical devices}
H10D64/252 (For vertical or pseudo-vertical devices) appears on 2,925 US grants and 3,465 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,925
- Published applications
- 3,465
- Assignees
- 460
- Inventors
- 3,340
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 8 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 5 | 0 |
| 1989 | 7 | 0 |
| 1990 | 7 | 0 |
| 1991 | 5 | 0 |
| 1992 | 4 | 0 |
| 1993 | 8 | 0 |
| 1994 | 9 | 0 |
| 1995 | 12 | 0 |
| 1996 | 7 | 0 |
| 1997 | 16 | 0 |
| 1998 | 20 | 0 |
| 1999 | 17 | 0 |
| 2000 | 23 | 0 |
| 2001 | 19 | 8 |
| 2002 | 26 | 42 |
| 2003 | 36 | 47 |
| 2004 | 37 | 48 |
| 2005 | 37 | 57 |
| 2006 | 35 | 60 |
| 2007 | 33 | 75 |
| 2008 | 35 | 78 |
| 2009 | 58 | 117 |
| 2010 | 80 | 110 |
| 2011 | 100 | 110 |
| 2012 | 105 | 155 |
| 2013 | 119 | 129 |
| 2014 | 160 | 167 |
| 2015 | 155 | 166 |
| 2016 | 173 | 163 |
| 2017 | 155 | 174 |
| 2018 | 166 | 191 |
| 2019 | 191 | 203 |
| 2020 | 192 | 221 |
| 2021 | 207 | 190 |
| 2022 | 151 | 208 |
| 2023 | 131 | 193 |
| 2024 | 130 | 219 |
| 2025 | 143 | 196 |
| 2026 | 88 | 138 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Vertical-transport field-effect transistors with shared backside power supply6 Oct 2026US 12,757,717 B2International Business Machines Corporation
- Thin film transistors and related fabrication techniques29 Sep 2026US 12,751,044 B2Micron Technology, Inc.
- Silicon carbide semiconductor device and power conversion apparatus29 Sep 2026US 12,751,068 B2Mitsubishi Electric Corporation
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Power mosfet device having a source region embedded via heteroepitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304850 A1Chongqing Simic Semiconductor Limited
- Semiconductor devices having vertical field effect transistors1 Oct 2026US 2026/0304893 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor Structure and Manufacturing Method Thereof24 Sep 2026US 2026/0293190 A1Diodes Incorporated
- Semiconductor device24 Sep 2026US 2026/0293192 A1Kabushiki Kaisha Toshiba
- P-type region integration for enhanced square-cell sic mosfet24 Sep 2026US 2026/0293194 A1Renesas Electronics Corporation
Most cited
By later US patents
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Vertical power mosfet having thick metal layer to reduce distributed resistance258US 5,665,996 ASiliconix Incorporated · 1997
- Power semiconductor devices having trench-based gate electrodes and field plates232US 6,388,286 B1North Carolina State University · 2002
- Dual trench power MOSFET203US 6,710,403 B2Fairchild Semiconductor Corporation · 2004