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US 2026/0293192 A1Published application
Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorKohei OASA
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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorKohei OASA
Estimating the term…
A semiconductor device of an embodiment includes a semiconductor member, a source electrode, a drain electrode, a gate electrode, a first conductive portion, a second conductive portion, a first insulating portion, and a second insulating portion. The semiconductor member is provided with a first concave portion and a second concave portion, which are recessed from a surface in a first direction on a first side toward a second side. The source electrode is located on the first side of the semiconductor member. The drain electrode is located on the second side of the semiconductor member. The gate electrode is located in the first concave portion. At least a part of the first conductive portion is located in the second concave portion. The first conductive portion is connected to the source electrode. The second conductive portion is located in the second concave portion and on the second side of the first conductive portion. The first insulating portion insulates the semiconductor member from the gate electrode in the first concave portion. The second insulating portion insulates the semiconductor member, the source electrode, the first conductive portion, and the second conductive portion from each other in the second concave portion.
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.