H10D 64/2523
For vertical devices wherein the source or drain electrodes extend entirely through
Official title: {for vertical devices wherein the source or drain electrodes extend entirely through semiconductor bodies}
H10D64/2523 (For vertical devices wherein the source or drain electrodes extend entirely through) appears on 36 US grants and 45 published applications in this corpus.
Search patents in H10D- Granted patents
- 36
- Published applications
- 45
- Assignees
- 21
- Inventors
- 83
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 1 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 2 |
| 2008 | 1 | 1 |
| 2009 | 0 | 2 |
| 2010 | 1 | 1 |
| 2011 | 1 | 3 |
| 2012 | 4 | 2 |
| 2013 | 2 | 1 |
| 2014 | 2 | 1 |
| 2015 | 1 | 2 |
| 2016 | 2 | 3 |
| 2017 | 2 | 3 |
| 2018 | 2 | 1 |
| 2019 | 3 | 1 |
| 2020 | 2 | 1 |
| 2021 | 0 | 3 |
| 2022 | 3 | 3 |
| 2023 | 1 | 2 |
| 2024 | 1 | 6 |
| 2025 | 2 | 2 |
| 2026 | 4 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Vertical thin film transistor with perforated or comb-gate electrode configuration and fabrication methods for same16 Jun 2026US 12,660,286 B2Solsona Enterprise, LLC
- Vertical transistor with self-align backside contact19 May 2026US 12,635,216 B2International Business Machines Corporation
- Semiconductor device and method for forming the same24 Feb 2026US 12,563,989 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method of a semiconductor device16 Sep 2025US 12,419,052 B2SK hynix Inc.
- Semiconductor device and method for forming the same4 Jun 2026US 2026/0157133 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device8 Jan 2026US 2026/0013214 A1Nuvoton Technology Corporation Japan
- Thin-film transistor and preparation method therefor, and memory and display27 Nov 2025US 2025/0366029 A1Institute of Microelectronics, Chinese Academy of Sciences
- Semiconductor device13 Nov 2025US 2025/0351556 A1Nuvoton Technology Corporation Japan
- Semiconductor device and manufacturing method of a semiconductor device15 Aug 2024US 2024/0276724 A1SK hynix Inc.
Most cited
By later US patents
- Semiconductor power device having a top-side drain using a sinker trench35US 7,352,036 B2Fairchild Semiconductor Corporation · 2008
- Semiconductor power device having a top-side drain using a sinker trench15US 8,026,558 B2Fairchild Semiconductor Corporation · 2011
- Trench DMOS device with improved drain contact9US 6,657,255 B2General Semiconductor, Inc. · 2003
- Electrode structure and semiconductor device6US 8,154,129 B2Sanyo Semiconductor Co., Ltd. · 2012
- Wafer level chip scale package5US 8,362,606 B2Alpha and Omega Semiconductor Incorporated · 2013