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US 12,419,052 B2Granted
Semiconductor device and manufacturing method of a semiconductor device
AssigneeSK hynix Inc.
InventorIn Su Park
Life of this patent
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Abstract
A semiconductor device includes a stack structure, a channel layer passing through the stack structure, a memory layer enclosing the channel layer and including first and second openings which expose the channel layer, a well plate coupled to the channel layer through the first opening, and a source plate coupled to the channel layer through the second opening.
Claims5
A semiconductor device, comprising:
- a first well region;
- a second well region over the first well region;
- a source region over the second well region;
- a stack structure over the source region;
- a slit insulting structure separating the stack structure, the source region and the second well region into a first region and a second region;
- and
- a source connection structure passing through the stack structure in the second region, wherein the source connection structure is physically contacted with the source region.
4 more elements
Dependencies are inferred from the claim text.