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US 12,635,216 B2Granted
Vertical transistor with self-align backside contact
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Su Chen Fan, Jay William Strane, Ruilong Xie
Life of this patent
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Abstract
A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.
Claims23
A semiconductor structure comprising:
- a fin of a vertical transistor structure;
- a top source drain region on a top side of the fin;
- top spacers isolating the top source drain region from a gate;
- a bottom source drain region on a bottom side of the fin;
- bottom spacers isolating the bottom source drain region from the gate;
- a backside contact below and contacting the bottom source drain region;
- and
- a shallow trench isolation region, wherein a bottom surface of the backside contact is substantially flush with a bottom most surface of the shallow trench isolation region.
5 more elements
A semiconductor structure comprising:
- a fin of a vertical transistor structure;
- a top source drain region on a top side of the fin;
- a bottom source drain region on a bottom side of the fin, wherein a width of the bottom source drain region is larger than a length of the fin, wherein the width of the bottom source drain region is perpendicular to the length of the fin;
- a backside contact below and contacting the bottom source drain region;
- and
- a shallow trench isolation region, wherein a bottom surface of the backside contact is substantially flush with a bottom most surface of the shallow trench isolation region.
3 more elements
A semiconductor structure comprising:
- a fin of a vertical transistor structure;
- a top source drain region on a top side of the fin;
- a bottom source drain region on a bottom side of the fin, wherein a width of the bottom source drain region is larger than a width of the fin;
- a backside contact below and contacting the bottom source drain region, wherein a length of the bottom source drain region is equal to a length of the backside contact, wherein a width of the bottom source drain region is equal to a width of the backside contact;
- and
- a shallow trench isolation region, wherein a bottom surface of the backside contact is substantially flush with a bottom most surface of the shallow trench isolation region.
3 more elements
A semiconductor structure comprising:
- a fin of a vertical transistor structure;
- a top source drain region on a top surface of the fin;
- a bottom source drain region on a bottom side of the fin, wherein the bottom source drain region contacts bottom surfaces of one or more additional fins adjacent the fin;
- a backside contact below and contacting the bottom source drain region;
- and
- a shallow trench isolation region, wherein a bottom surface of the backside contact is substantially flush with a bottom most surface of the shallow trench isolation region.
3 more elements
Dependencies are inferred from the claim text.