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US 6,710,403 B2Granted
Dual trench power MOSFET
AssigneeFairchild Semiconductor Corporation
InventorSteven Sapp
Life of this patent
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Abstract
In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region of a first conductivity type, a gate trench which extends into the first semiconductor region, and a source trench which extends into the first semiconductor region. The source trench is laterally spaced from the gate trench.
Claims11
A MOSFET comprising:
- a first semiconductor region of a first conductivity type;
- a gate trench extending into the first semiconductor region;
- and
- a source trench extending deeper into the first semiconductor region than the gate trench, the source trench being laterally spaced from the gate trench.
1 more element
A method of forming a MOSFET, comprising:
- forming a first semiconductor region of a first conductivity type;
- forming a gate trench extending into the first semiconductor region;
- and
- forming a source trench extending deeper into the first semiconductor region than the gate trench, the source trench being laterally spaced from the gate trench.
1 more element
Dependencies are inferred from the claim text.