H10D 64/2527
For vertical devices wherein the source or drain electrodes are recessed in
Official title: {for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies}
H10D64/2527 (For vertical devices wherein the source or drain electrodes are recessed in) appears on 1,438 US grants and 1,794 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,438
- Published applications
- 1,794
- Assignees
- 286
- Inventors
- 1,770
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 7 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 5 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 5 | 0 |
| 1995 | 10 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 6 | 0 |
| 1999 | 8 | 0 |
| 2000 | 16 | 0 |
| 2001 | 14 | 6 |
| 2002 | 19 | 24 |
| 2003 | 18 | 27 |
| 2004 | 21 | 30 |
| 2005 | 20 | 34 |
| 2006 | 21 | 38 |
| 2007 | 22 | 37 |
| 2008 | 22 | 45 |
| 2009 | 32 | 76 |
| 2010 | 42 | 81 |
| 2011 | 71 | 79 |
| 2012 | 65 | 97 |
| 2013 | 79 | 79 |
| 2014 | 106 | 94 |
| 2015 | 84 | 90 |
| 2016 | 79 | 69 |
| 2017 | 63 | 68 |
| 2018 | 66 | 65 |
| 2019 | 62 | 72 |
| 2020 | 74 | 76 |
| 2021 | 87 | 97 |
| 2022 | 64 | 99 |
| 2023 | 61 | 102 |
| 2024 | 54 | 117 |
| 2025 | 74 | 105 |
| 2026 | 25 | 87 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Semiconductor device and method of manufacturing semiconductor device25 Aug 2026US 12,720,799 B2Fuji Electric Co., Ltd.
- Semiconductor device and method of manufacturing the same18 Aug 2026US 12,713,650 B2Renesas Electronics Corporation
- Trench power device with enhanced charge carrier mobility11 Aug 2026US 12,707,701 B2Infineon Technologies AG
- Semiconductor device and method for manufacturing semiconductor device4 Aug 2026US 12,701,742 B2Kabushiki Kaisha Toshiba
- Power mosfet device having a source region embedded via heteroepitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304850 A1Chongqing Simic Semiconductor Limited
- Semiconductor Structure and Manufacturing Method Thereof24 Sep 2026US 2026/0293190 A1Diodes Incorporated
- Semiconductor device24 Sep 2026US 2026/0293192 A1Kabushiki Kaisha Toshiba
- Dual gate trench mosfet with shielded gate electrode in step trench24 Sep 2026US 2026/0293283 A1Nami MOS CO., LTD.
- Semiconductor device24 Sep 2026US 2026/0293285 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- Dual trench power MOSFET203US 6,710,403 B2Fairchild Semiconductor Corporation · 2004
- Vertical power MOSFET structure having reduced cell area198US 5,366,914 ANEC Corporation · 1994
- Self-aligned power MOSFET device with recessed gate and source168US 5,801,417 AAdvanced Power Technology, Inc. · 1998
- Insulated gate semiconductor device161US 5,623,152 AMitsubishi Denki Kabushiki Kaisha · 1997
- Cellular trench-gate field-effect transistors157US 6,359,308 B1U. S. Philips Corporation · 2002