Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor substrate of a first conductivity type, the semiconductor substrate having a first main surface and a second main surface opposite to each other;
• forming a drift layer of the first conductivity type on the first main surface of the semiconductor substrate;
• forming a base layer of a second conductivity type in the drift layer at a surface thereof;
• selectively forming a plurality of source regions of the first conductivity type, in the base layer at a surface thereof;
• forming a plurality of gate electrodes at the surface of the base layer and surfaces of the plurality of source regions, via a plurality of gate insulating films, respectively;
• forming an interlayer insulating film covering the plurality of source regions and the plurality of gate electrodes;
• forming, in the interlayer insulating film and in the plurality of source regions at the surfaces thereof, a plurality of contact holes, a longitudinal direction of each of the plurality of contact holes being a first direction;
• and
• forming a front electrode on the interlayer insulating film, including:
• forming a lower electrode on the interlayer insulating film, and
• forming, on the lower electrode, an upper electrode having a plurality of recesses each extending in a second direction orthogonal to the first direction.