Trench power device with enhanced charge carrier mobility
AssigneeInfineon Technologies AG
InventorsSaurabh Roy, Hans-Joachim Schulze, Oliver Blank, Josef Anton Moser, Thomas Aichinger
Life of this patent
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Abstract
A power transistor device includes a semiconductor substrate, a gate trench extending into the semiconductor substrate, a transistor gate provided in the gate trench, and an insulating structure formed between the transistor gate and a side wall of the gate trench. The insulating structure is configured to electrically insulate the transistor gate from a channel region which extends along the side wall of the gate trench. The insulating structure includes a layer of piezoelectric material.
Claims26
A power transistor device, comprising:
- a semiconductor substrate;
- a gate trench extending into the semiconductor substrate;
- a transistor gate provided in the gate trench;
- and
- an insulating structure formed between the transistor gate and a side wall of the gate trench, the insulating structure being configured to electrically insulate the transistor gate from a channel region which extends along the side wall of the gate trench, the insulating structure comprising a layer of piezoelectric material,
- wherein the insulating structure further comprises an insulating layer sandwiched between the side wall of the gate trench and the layer of piezoelectric material.
A power transistor device, comprising:
- a semiconductor substrate;
- a gate trench extending into the semiconductor substrate;
- a transistor gate provided in the gate trench;
- a field plate provided in the gate trench below the transistor gate;
- and
- an insulating structure formed between the field plate and a side wall of the gate trench, the insulating structure being configured to electrically insulate the field plate from a drift zone region which extends along the side wall of the gate trench, the insulating structure comprising a layer of piezoelectric material.
A power transistor device, comprising:
- a semiconductor substrate;
- a gate trench extending into the semiconductor substrate;
- a transistor gate provided in the gate trench;
- and
- an insulating structure formed between the transistor gate and a side wall of the gate trench, the insulating structure being configured to electrically insulate the transistor gate from a channel region which extends along the side wall of the gate trench, the insulating structure comprising a layer of piezoelectric material,
- wherein the insulating structure further comprises a first insulating layer and a second insulating layer, the layer of piezoelectric material being sandwiched between the first insulating layer and the second insulating layer.
A power transistor device, comprising:
- a semiconductor substrate;
- a gate trench extending into the semiconductor substrate;
- a transistor gate provided in the gate trench;
- an insulating structure formed between the transistor gate and a side wall of the gate trench, the insulating structure being configured to electrically insulate the transistor gate from a channel region which extends along the side wall of the gate trench, the insulating structure comprising a layer of piezoelectric material;
- and
- a field plate provided in a field plate trench which is separate from the gate trench.
Dependencies are inferred from the claim text.