Semiconductor device

Abstract

A semiconductor part located on the first electrode, a conductive metal-oxide film, a second electrode, an insulating member, and a third electrode located inside the insulating member. The semiconductor part is of a first conductivity type. A first trench and a second trench are formed in an upper surface of the semiconductor part. The first trench and the second trench are separated from each other. The conductive metal-oxide film is located on at least a side surface of the first trench. The conductive metal-oxide film contacts the semiconductor part. The second electrode is located inside the first trench and on the semiconductor part. The second electrode contacts the conductive metal-oxide film and including a metal. The insulating member is located inside the second trench.

Dependencies are inferred from the claim text.