H10D 64/258
Characterised by the relative positions of the source or drain electrodes with
Official title: {characterised by the relative positions of the source or drain electrodes with respect to the gate electrode}
H10D64/258 (Characterised by the relative positions of the source or drain electrodes with) appears on 2,817 US grants and 3,080 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,817
- Published applications
- 3,080
- Assignees
- 452
- Inventors
- 4,656
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 6 | 0 |
| 1985 | 9 | 0 |
| 1986 | 10 | 0 |
| 1987 | 6 | 0 |
| 1988 | 17 | 0 |
| 1989 | 9 | 0 |
| 1990 | 9 | 0 |
| 1991 | 3 | 0 |
| 1992 | 17 | 0 |
| 1993 | 17 | 0 |
| 1994 | 8 | 0 |
| 1995 | 21 | 0 |
| 1996 | 17 | 0 |
| 1997 | 32 | 0 |
| 1998 | 44 | 0 |
| 1999 | 55 | 0 |
| 2000 | 66 | 0 |
| 2001 | 55 | 13 |
| 2002 | 44 | 58 |
| 2003 | 56 | 33 |
| 2004 | 27 | 29 |
| 2005 | 26 | 49 |
| 2006 | 32 | 43 |
| 2007 | 22 | 27 |
| 2008 | 26 | 39 |
| 2009 | 30 | 50 |
| 2010 | 45 | 39 |
| 2011 | 35 | 33 |
| 2012 | 37 | 76 |
| 2013 | 63 | 105 |
| 2014 | 81 | 113 |
| 2015 | 132 | 168 |
| 2016 | 200 | 233 |
| 2017 | 196 | 185 |
| 2018 | 190 | 145 |
| 2019 | 164 | 151 |
| 2020 | 152 | 156 |
| 2021 | 115 | 143 |
| 2022 | 108 | 229 |
| 2023 | 122 | 263 |
| 2024 | 177 | 265 |
| 2025 | 190 | 275 |
| 2026 | 136 | 160 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor device including multiple spacers and method for preparing the same6 Oct 2026US 12,757,429 B2Nanya Technology Corporation
- Semiconductor device and method of fabricating the same6 Oct 2026US 12,757,459 B2Samsung Electronics Co., Ltd.
- Nitride semiconductor device6 Oct 2026US 12,757,465 B2Panasonic Holdings Corporation
- Wrap around backside source/drain contact6 Oct 2026US 12,757,469 B2International Business Machines Corporation
- Varying the po space in semiconductor layouts8 Oct 2026US 2026/0313864 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing same8 Oct 2026US 2026/0313941 A1Samsung Electronics Co., Ltd.
- Finfet device having flat-top epitaxial features and method of making the same8 Oct 2026US 2026/0314059 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having a layered source pad8 Oct 2026US 2026/0314377 A1Microchip Technology Incorporated
- Semiconductor device1 Oct 2026US 2026/0304836 A1Research & Business Foundation Sungkyunkwan University
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Self aligned contact scheme568US 9,548,366 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Self aligned contact scheme522US 9,859,386 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Semiconductor device having a hollow around a gate electrode and a method for producing the same480US 5,559,046 AMatsushita Electronics Corporation · 1996