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US 2026/0304836 A1Published application
Semiconductor device
AssigneesSamsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan University
InventorsSang-Yong PARK, Jin-Hong PARK, Ju-Hee LEE
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Abstract
A semiconductor device includes a substrate. A first channel pattern is disposed on the substrate. The first channel pattern includes a first side and a second side opposite to each other in a first direction. A first gate electrode is disposed on the first side of the first channel pattern. A first source/drain electrode is disposed on the first side of the first channel pattern. A second source/drain electrode is disposed on the second side of the first channel pattern. The first gate electrode overlaps the second source/drain electrode in the first direction.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a stacked structure in which a sacrificial mold film and a channel film are alternately stacked on a substrate;
- forming an inner mold insulating film and a first channel pattern including a first side and a second side opposite to each other in a first direction by patterning the stacked structure;
- forming an outer mold insulating film covering side surfaces of the inner mold insulating film and side surfaces of the first channel pattern on the substrate;
- forming a first source/drain trench exposing at least a portion of the first side of the first channel pattern and a second source/drain trench exposing at least a portion of the second side of the first channel pattern by removing a portion of the outer mold insulating film;
- forming a first source/drain electrode inside the first source/drain trench, and forming a second source/drain electrode inside the second source/drain trench;
- forming a first gate trench exposing at least a portion of the first side of the first channel pattern by removing a portion of the outer mold insulating film;
- and
- forming a first gate electrode inside the first gate trench,
- wherein the first gate electrode overlaps the second source/drain electrode in the first direction.
6 more elements
A method for fabricating a semiconductor device, comprising:
- forming a stacked structure in which a sacrificial mold film and a channel film are alternately stacked on a substrate;
- forming an inner mold insulating film and a first channel pattern including a first side and a second side opposite to each other in a first direction by patterning the stacked structure;
- forming an outer mold insulating film covering side surfaces of the inner mold insulating film and side surfaces of the first channel pattern on the substrate;
- forming a first source/drain trench exposing at least a portion of the first side of the first channel pattern and a second source/drain trench exposing at least a portion of the second side of the first channel pattern by removing a portion of the outer mold insulating film;
- forming a first source/drain electrode inside the first source/drain trench, and forming a second source/drain electrode inside the second source/drain trench;
- forming a first gate trench exposing at least a portion of the first side of the first channel pattern by removing a portion of the outer mold insulating film;
- and
- forming a first gate electrode inside the first gate trench,
- wherein the first channel pattern extends in a second direction crossing the first direction,
- the first gate electrode is spaced apart from the first source/drain electrode in the second direction, and
- the first gate electrode overlaps the second source/drain electrode in the first direction.
8 more elements
A method for fabricating a semiconductor device, comprising:
- forming a stacked structure in which a sacrificial mold film and a channel film are alternately stacked on a substrate;
- forming an inner mold insulating film and a first channel pattern including a first side and a second side opposite to each other in a first direction by patterning the stacked structure;
- forming an outer mold insulating film covering side surfaces of the inner mold insulating film and side surfaces of the first channel pattern on the substrate;
- forming a first source/drain trench exposing at least a portion of the first side of the first channel pattern and a second source/drain trench exposing at least a portion of the second side of the first channel pattern by removing a portion of the outer mold insulating film;
- forming a first source/drain electrode inside the first source/drain trench, and forming a second source/drain electrode inside the second source/drain trench;
- forming a first gate trench exposing at least a portion of the first side of the first channel pattern and a second gate trench exposing at least a portion of the second side of the first channel pattern by removing a portion of the outer mold insulating film;
- and
- forming a first gate electrode inside the first gate trench, and forming a second gate electrode inside the second gate trench,
- wherein the first gate electrode overlaps the second source/drain electrode in the first direction, and
- the second gate electrode overlaps the first source/drain electrode in the first direction.
7 more elements
Dependencies are inferred from the claim text.