H10D 64/259
Source or drain electrodes being self-aligned with the gate electrode and having
Official title: {Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric}
H10D64/259 (Source or drain electrodes being self-aligned with the gate electrode and having) appears on 1,343 US grants and 1,137 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,343
- Published applications
- 1,137
- Assignees
- 216
- Inventors
- 1,797
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 4 | 0 |
| 1985 | 7 | 0 |
| 1986 | 8 | 0 |
| 1987 | 5 | 0 |
| 1988 | 12 | 0 |
| 1989 | 7 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 6 | 0 |
| 1993 | 7 | 0 |
| 1994 | 4 | 0 |
| 1995 | 16 | 0 |
| 1996 | 7 | 0 |
| 1997 | 16 | 0 |
| 1998 | 31 | 0 |
| 1999 | 40 | 0 |
| 2000 | 50 | 0 |
| 2001 | 50 | 7 |
| 2002 | 25 | 44 |
| 2003 | 44 | 23 |
| 2004 | 21 | 20 |
| 2005 | 17 | 37 |
| 2006 | 23 | 33 |
| 2007 | 12 | 15 |
| 2008 | 20 | 23 |
| 2009 | 20 | 27 |
| 2010 | 29 | 14 |
| 2011 | 19 | 13 |
| 2012 | 18 | 40 |
| 2013 | 29 | 52 |
| 2014 | 38 | 51 |
| 2015 | 74 | 108 |
| 2016 | 117 | 139 |
| 2017 | 111 | 110 |
| 2018 | 123 | 73 |
| 2019 | 73 | 64 |
| 2020 | 67 | 62 |
| 2021 | 46 | 43 |
| 2022 | 34 | 44 |
| 2023 | 29 | 39 |
| 2024 | 36 | 22 |
| 2025 | 32 | 27 |
| 2026 | 5 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method of manufacturing a semiconductor device and a semiconductor device16 Jun 2026US 12,660,226 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Self-aligned gate jumper connecting adjacent gates16 Jun 2026US 12,660,281 B2International Business Machines Corporation
- Fin patterning for advanced integrated circuit structure fabrication27 Jan 2026US 12,538,545 B2Intel Corporation
- Finfet device having flat-top epitaxial features and method of making the same8 Oct 2026US 2026/0314059 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Self-aligned sidewall contact for backside interconnect17 Sep 2026US 2026/0282493 A1International Business Machines Corporation
- Semiconductor structure and method for forming the same16 Apr 2026US 2026/0107512 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device19 Mar 2026US 2026/0082689 A1Samsung Electronics Co., Ltd.
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Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Self aligned contact scheme568US 9,548,366 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Self aligned contact scheme522US 9,859,386 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Semiconductor device and method for fabricating the same398US 9,331,200 B1United Microelectronics Corp. · 2016