H10D 64/259

Source or drain electrodes being self-aligned with the gate electrode and having

Official title: {Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric}

H10D64/259 (Source or drain electrodes being self-aligned with the gate electrode and having) appears on 1,343 US grants and 1,137 published applications in this corpus.

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Latest grant
11 Aug 2026

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H10D 64/259: granted patents and published applications per publication year
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198570
198680
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1988120
198970
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2001507
20022544
20034423
20042120
20051737
20062333
20071215
20082023
20092027
20102914
20111913
20121840
20132952
20143851
201574108
2016117139
2017111110
201812373
20197364
20206762
20214643
20223444
20232939
20243622
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202657

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