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US 9,331,200 B1Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsLanxiang Wang, Hong Liao, Chao Jiang, Duan Quan Liao, Ye Chao Li
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; and forming a first epitaxial layer, a second epitaxial layer, and a silicide layer in the substrate adjacent to the gate structure. Preferably, the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn.
Claims11
A method for fabricating semiconductor device, comprising:
- providing a substrate having a gate structure thereon;
- and
- forming a first epitaxial layer, a second epitaxial layer, and a silicide layer in the substrate adjacent to the gate structure, wherein the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn, and the content of Ge and Sn in the first epitaxial layer is between 15-30 atomic percentage.
A semiconductor device, comprising:
- a substrate having a gate structure thereon;
- a first epitaxial layer in the substrate adjacent to the gate structure;
- a second epitaxial layer on the first epitaxial layer;
- and
- a silicide layer on the second epitaxial layer, wherein the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn, and the content of Ge and Sn in the first epitaxial layer is between 15-30 atomic percentage.
2 more elements
Dependencies are inferred from the claim text.