Fin patterning for advanced integrated circuit structure fabrication

An integrated circuit structure, comprising:

• a first plurality of fins comprising silicon, wherein adjacent individual fins of the first plurality of fins are spaced apart from one another by a first amount, the first plurality of fins continuous with an underlying silicon substrate;
• and
• a second plurality of fins comprising silicon, wherein adjacent individual fins of the second plurality of fins are spaced apart from one another by the first amount, the second plurality of fins continuous with the underlying silicon substrate, wherein closest fins of the first plurality of fins and the second plurality of fins are spaced apart from one another by a second amount, the second amount greater than two times but less than three times the first amount, wherein the first amount is a first pitch, and the second amount is a second pitch, and wherein the underlying silicon substrate is substantially flat between the closest fins of the first plurality of fins and the second plurality of fins.

An integrated circuit structure, comprising:

• a first plurality of fins comprising silicon, wherein adjacent individual fins of the first plurality of fins are spaced apart from one another by a pitch, the first plurality of fins continuous with an underlying silicon substrate;
• and
• a second plurality of fins comprising silicon, wherein adjacent individual fins of the second plurality of fins are spaced apart from one another by the pitch, the second plurality of fins continuous with the underlying silicon substrate, wherein closest fins of the first plurality of fins and the second plurality of fins are spaced apart from one another by an amount greater than two times but less than three times the pitch, and wherein the underlying silicon substrate is substantially flat between the closest fins of the first plurality of fins and the second plurality of fins.