Semiconductor device

A semiconductor device, comprising

• an active pattern extending in a second direction different from a first direction, wherein the first direction and the second direction are in a common lateral plane;
• a lower channel pattern and a lower source/drain pattern that are arranged on the active pattern and alternately arranged in the second direction;
• an upper channel pattern on the lower channel pattern, and an upper source/drain pattern on the lower source/drain pattern;
• a gate pattern extending in the first direction and arranged on the lower channel pattern and the upper channel pattern;
• a gate cutting pattern extending in the second direction across the gate pattern to separate portions of the gate pattern;
• and
• a through-via arranged in the gate cutting pattern, wherein the through-via comprises:
• a first via portion extending from a lower end of the through-via to an upper end of the through-via in a third direction perpendicular to the first and second directions, and
• a second via portion and a third via portion that are arranged adjacent to a lateral side of the first via portion in the first direction and alternately arranged in the second direction,
• wherein a level of a lower end of the third via portion in the third direction is higher than levels of lower ends of the first via portion and the second via portion in the third direction.

A semiconductor device, comprising:

• an active pattern extending in a second direction different from a first direction, wherein the first direction and the second direction are in a common lateral plane;
• a lower channel pattern and a lower source/drain pattern that are arranged on the active pattern and alternately arranged in the second direction;
• an upper channel pattern on the lower channel pattern, and an upper source/drain pattern on the lower source/drain pattern;
• a gate pattern extending in the first direction and arranged on the lower channel pattern and the upper channel pattern;
• a separation pattern arranged, in the second direction, between (i) one of the lower source/drain pattern and the upper source/drain pattern and (ii) a second lower source/drain pattern and a second upper source/drain pattern;
• and
• a gate cutting pattern extending in the second direction across the gate pattern to separate portions of the gate pattern,
• wherein a portion of the separation pattern protrudes into the gate cutting pattern in the first direction.