FinFET device having flat-top epitaxial features and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Jing Lee, Li-Wei Chou, Ming-Hua Yu
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Abstract
A semiconductor device includes a substrate, a semiconductor feature protruding from the substrate and extending lengthwise in a first direction, an epitaxial feature directly above the semiconductor feature, and a gate stack adjacent the epitaxial feature. The epitaxial feature comprises a lower portion and an upper portion over the lower portion. The upper portion extends partially through the lower portion in a cross section perpendicular to the first direction. A topmost surface of the upper portion is substantially flat.
Claims20
A semiconductor device, comprising:
- a substrate;
- a semiconductor feature protruding from the substrate and extending lengthwise in a first direction;
- an epitaxial feature directly above the semiconductor feature;
- and
- a gate stack adjacent the epitaxial feature,
- wherein:
- the epitaxial feature comprises a lower portion and an upper portion over the lower portion,
- the upper portion extends partially through the lower portion in a cross section perpendicular to the first direction, and
- a topmost surface of the upper portion is substantially flat.
A semiconductor device, comprising:
- a substrate;
- first and second fins protruding from the substrate;
- a first epitaxial feature over the first fin, wherein the first epitaxial feature comprises a first lower portion and a first upper portion with different dopant concentrations, the first upper portion extends partially through the first lower portion, and a top surface of the first epitaxial feature is substantially flat;
- a second epitaxial feature over the second fin, wherein the second epitaxial feature has a rhombus-shaped profile, wherein a width of the first epitaxial feature is greater than a width of the second epitaxial feature;
- and
- a conductive feature directly interfacing the top surface of the first upper portion and the second epitaxial feature.
A semiconductor device, comprising:
- a substrate;
- a fin-shape structure protruding from the substrate;
- an epitaxial feature directly above the fin-shape structure;
- a gate stack adjacent the epitaxial feature;
- and
- a contact feature over the epitaxial feature,
- wherein:
- the epitaxial feature comprises a lower portion and an upper portion over the lower portion,
- the upper portion extends partially through the lower portion,
- the upper portion has a first slanted side surface facing upwards and a second slanted side surface facing downwards,
- the contact feature is in physical contact with the first slanted side surface and the second slanted side surface, and
- a bottommost portion of the contact feature is above a bottom surface of the lower portion of the epitaxial feature.
Dependencies are inferred from the claim text.