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US 2026/0314377 A1Published application
Semiconductor device having a layered source pad
AssigneeMicrochip Technology Incorporated
InventorsShesh Mani Pandey, Sundar Babu Isukapati, Dennis Meyer, Bruce Odekirk
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Abstract
A semiconductor device includes a source electrode. The source electrode includes spaced apart first and second metal layers and a via extending between and electrically connecting the first metal layer and the second metal layer. The metal layer includes first and second source electrode contacts. The source second metal layer includes a monolithic source pad spaced apart from and electrically connected to the first and second source electrodes.
Claims20
A semiconductor device, comprising:
- a source electrode including –
- spaced first and second metal layers;
- and
- a via extending between and electrically connecting the first metal layer and the second metal layer.
1 more element
A semiconductor device, comprising:
- first and second source electrode contacts;
- and
- a monolithic source pad spaced apart from and electrically connected to the first and second source electrodes.
Dependencies are inferred from the claim text.