H10D 64/01304
Characterised by the conductor
Official title: {characterised by the conductor}
H10D64/01304 (Characterised by the conductor) appears on 8,250 US grants and 8,044 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,250
- Published applications
- 8,044
- Assignees
- 769
- Inventors
- 10,244
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 10 | 0 |
| 1983 | 7 | 0 |
| 1984 | 12 | 0 |
| 1985 | 12 | 0 |
| 1986 | 13 | 0 |
| 1987 | 12 | 0 |
| 1988 | 20 | 0 |
| 1989 | 9 | 0 |
| 1990 | 18 | 0 |
| 1991 | 28 | 0 |
| 1992 | 29 | 0 |
| 1993 | 24 | 0 |
| 1994 | 29 | 0 |
| 1995 | 37 | 0 |
| 1996 | 41 | 0 |
| 1997 | 65 | 0 |
| 1998 | 135 | 0 |
| 1999 | 240 | 0 |
| 2000 | 297 | 0 |
| 2001 | 323 | 92 |
| 2002 | 259 | 282 |
| 2003 | 294 | 252 |
| 2004 | 285 | 329 |
| 2005 | 224 | 387 |
| 2006 | 266 | 395 |
| 2007 | 221 | 380 |
| 2008 | 201 | 444 |
| 2009 | 241 | 345 |
| 2010 | 307 | 335 |
| 2011 | 290 | 267 |
| 2012 | 264 | 247 |
| 2013 | 255 | 287 |
| 2014 | 315 | 358 |
| 2015 | 341 | 436 |
| 2016 | 453 | 397 |
| 2017 | 353 | 314 |
| 2018 | 295 | 323 |
| 2019 | 360 | 379 |
| 2020 | 371 | 378 |
| 2021 | 292 | 318 |
| 2022 | 259 | 286 |
| 2023 | 200 | 262 |
| 2024 | 223 | 242 |
| 2025 | 200 | 195 |
| 2026 | 106 | 114 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 64/01318The conductor comprising a layer of alloy material, compound material or organic2,613
- H10D 64/01306The conductor comprising a layer of silicon contacting the insulator2,604
- H10D 64/01326Aspects related to lithography, isolation or planarisation of the conductor2,027
- H10D 64/01324Characterised by the sectional shape1,147
- H10D 64/01316The conductor comprising a layer of elemental metal contacting the insulator775
- H10D 64/01314The conductor comprising a layer of ge, c or of compounds of238
- H10D 64/01322The conductor contacting the insulator having a lateral variation in doping, composition238
Recent patents
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- Gate feature in FinFET device29 Sep 2026US 12,751,070 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure with hard mask and method for manufacturing the same22 Sep 2026US 12,745,412 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor gate structures and methods of forming the same8 Oct 2026US 2026/0314002 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cap for gate stack of multigate device8 Oct 2026US 2026/0314006 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Large dimension metal gate field-effect transistor (fet) with metal gate dummy structures8 Oct 2026US 2026/0314024 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device605US 6,017,779 ASeiko Epson Corporation · 2000
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method of depositing barrier layer for metal gates592US 6,858,524 B2ASM International N.V. · 2005
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004