H10D 64/01314
The conductor comprising a layer of ge, c or of compounds of
Official title: {the conductor comprising a layer of Ge, C or of compounds of Si, Ge or C contacting the insulator}
H10D64/01314 (The conductor comprising a layer of ge, c or of compounds of) appears on 238 US grants and 212 published applications in this corpus.
Search patents in H10D- Granted patents
- 238
- Published applications
- 212
- Assignees
- 82
- Inventors
- 463
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 6 | 0 |
| 2001 | 14 | 3 |
| 2002 | 17 | 16 |
| 2003 | 18 | 23 |
| 2004 | 23 | 28 |
| 2005 | 25 | 23 |
| 2006 | 15 | 11 |
| 2007 | 7 | 16 |
| 2008 | 9 | 12 |
| 2009 | 14 | 7 |
| 2010 | 7 | 5 |
| 2011 | 6 | 4 |
| 2012 | 5 | 6 |
| 2013 | 6 | 0 |
| 2014 | 7 | 11 |
| 2015 | 11 | 14 |
| 2016 | 8 | 5 |
| 2017 | 6 | 1 |
| 2018 | 1 | 5 |
| 2019 | 3 | 3 |
| 2020 | 3 | 2 |
| 2021 | 2 | 4 |
| 2022 | 3 | 1 |
| 2023 | 1 | 5 |
| 2024 | 3 | 5 |
| 2025 | 2 | 2 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with capping layer and method for fabricating the same21 Jul 2026US 12,690,256 B2Nanya Technology Corporation
- Semiconductor device and method of manufacturing the same19 May 2026US 12,635,214 B2Fuji Electric Co., Ltd.
- Semiconductor device with capping layer16 Dec 2025US 12,501,686 B2Nanya Technology Corporation
- Semiconductor devices with metal intercalated high-k capping27 May 2025US 12,315,730 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with composite gate dielectric and method for preparing the same19 Nov 2024US 12,150,290 B2Nanya Technology Corporation
- Semiconductor device with capping layer6 Nov 2025US 2025/0344485 A1Nanya Technology Corporation
- Semiconductor devices with metal intercalated high-k capping18 Sep 2025US 2025/0293031 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with capping layer12 Sep 2024US 2024/0304696 A1Nanya Technology Corporation
- Semiconductor device with capping layer and method for fabricating the same12 Sep 2024US 2024/0304697 A1Nanya Technology Corporation
- Trench mosfet device and manufacturing method therefor14 Mar 2024US 2024/0088215 A1Lingrui Semiconductor (Shanghai) Co., Ltd.
Most cited
By later US patents
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004
- Silane and borane treatments for titanium carbide films535US 8,841,182 B1ASM IP Holding B. V. · 2014
- MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration245US 6,312,995 B1Advanced Micro Devices, Inc. · 2001
- Surface preparation prior to deposition219US 6,613,695 B2ASM America, Inc. · 2003
- Transistor with low resistance tip and method of fabrication in a CMOS process173US 6,165,826 AIntel Corporation · 2000