Loading patent…
AssigneeASM IP Holding B.V.
InventorsJerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Willem Maes, Suvi Haukka, Eric Shero, Tom E. Blomberg, Dong Li
Estimating the term…
Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that includes titanium and at least one halide ligand, a second source chemical that includes metal and carbon, where the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, where the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. The treatment can form a capping layer on the metal carbide film.
A process for treating a film comprising titanium carbide, the process comprising
A method for depositing a metal carbide thin film on a substrate in a reaction chamber, the method comprising a plurality of deposition cycles, each cycle comprising contacting the substrate with separate pulses of a first source chemical comprising a titanium halide, a second source chemical comprising carbon and aluminum, and a third source chemical comprising a silane or a borane, and wherein the metal carbide film comprises less than about 40% titanium on an atomic basis.
A method of forming a silicon capping layer on a film comprising titanium carbide, the method comprising:
Dependencies are inferred from the claim text.