H10D 64/01302
The insulator being formed after the semiconductor body, the semiconductor being silicon
Official title: {the insulator being formed after the semiconductor body, the semiconductor being silicon}
H10D64/01302 (The insulator being formed after the semiconductor body, the semiconductor being silicon) appears on 12,572 US grants and 12,269 published applications in this corpus.
Search patents in H10D- Granted patents
- 12,572
- Published applications
- 12,269
- Assignees
- 1,109
- Inventors
- 14,078
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 10 | 0 |
| 1978 | 7 | 0 |
| 1979 | 6 | 0 |
| 1980 | 7 | 0 |
| 1981 | 13 | 0 |
| 1982 | 13 | 0 |
| 1983 | 7 | 0 |
| 1984 | 14 | 0 |
| 1985 | 13 | 0 |
| 1986 | 18 | 0 |
| 1987 | 17 | 0 |
| 1988 | 31 | 0 |
| 1989 | 22 | 0 |
| 1990 | 27 | 0 |
| 1991 | 39 | 0 |
| 1992 | 47 | 0 |
| 1993 | 46 | 0 |
| 1994 | 54 | 0 |
| 1995 | 73 | 0 |
| 1996 | 79 | 0 |
| 1997 | 102 | 0 |
| 1998 | 185 | 0 |
| 1999 | 344 | 0 |
| 2000 | 425 | 0 |
| 2001 | 508 | 147 |
| 2002 | 423 | 498 |
| 2003 | 489 | 501 |
| 2004 | 516 | 624 |
| 2005 | 417 | 702 |
| 2006 | 475 | 663 |
| 2007 | 389 | 576 |
| 2008 | 347 | 617 |
| 2009 | 374 | 489 |
| 2010 | 452 | 464 |
| 2011 | 435 | 389 |
| 2012 | 368 | 388 |
| 2013 | 369 | 413 |
| 2014 | 452 | 514 |
| 2015 | 516 | 621 |
| 2016 | 622 | 564 |
| 2017 | 503 | 450 |
| 2018 | 415 | 439 |
| 2019 | 503 | 559 |
| 2020 | 523 | 542 |
| 2021 | 418 | 465 |
| 2022 | 367 | 411 |
| 2023 | 307 | 408 |
| 2024 | 346 | 353 |
| 2025 | 297 | 293 |
| 2026 | 140 | 179 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Integrated circuit structures with cavity spacers6 Oct 2026US 12,757,473 B2Intel Corporation
- Method for fabricating semiconductor device with protection liner for bit line6 Oct 2026US 12,757,695 B2Nanya Technology Corporation
- Inverted gate cut region29 Sep 2026US 12,751,063 B2International Business Machines Corporation
- Gate feature in FinFET device29 Sep 2026US 12,751,070 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure with hard mask and method for manufacturing the same22 Sep 2026US 12,745,412 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor gate structures and methods of forming the same8 Oct 2026US 2026/0314002 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cap for gate stack of multigate device8 Oct 2026US 2026/0314006 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Large dimension metal gate field-effect transistor (fet) with metal gate dummy structures8 Oct 2026US 2026/0314024 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006
- Method of forming a multilayer dielectric stack677US 6,627,503 B2Sharp Laboratories of America, Inc. · 2003