H10D 64/01332
Making the insulator
Official title: {Making the insulator}
H10D64/01332 (Making the insulator) appears on 4,909 US grants and 4,857 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,909
- Published applications
- 4,857
- Assignees
- 691
- Inventors
- 6,571
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 7 | 0 |
| 1978 | 5 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 9 | 0 |
| 1982 | 3 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 6 | 0 |
| 1987 | 6 | 0 |
| 1988 | 12 | 0 |
| 1989 | 12 | 0 |
| 1990 | 9 | 0 |
| 1991 | 10 | 0 |
| 1992 | 21 | 0 |
| 1993 | 21 | 0 |
| 1994 | 25 | 0 |
| 1995 | 35 | 0 |
| 1996 | 37 | 0 |
| 1997 | 37 | 0 |
| 1998 | 64 | 0 |
| 1999 | 127 | 0 |
| 2000 | 152 | 0 |
| 2001 | 202 | 63 |
| 2002 | 179 | 238 |
| 2003 | 217 | 259 |
| 2004 | 251 | 315 |
| 2005 | 205 | 356 |
| 2006 | 241 | 318 |
| 2007 | 197 | 245 |
| 2008 | 167 | 210 |
| 2009 | 151 | 169 |
| 2010 | 163 | 149 |
| 2011 | 169 | 145 |
| 2012 | 121 | 164 |
| 2013 | 139 | 143 |
| 2014 | 157 | 166 |
| 2015 | 192 | 231 |
| 2016 | 219 | 209 |
| 2017 | 156 | 146 |
| 2018 | 142 | 148 |
| 2019 | 174 | 204 |
| 2020 | 158 | 188 |
| 2021 | 156 | 170 |
| 2022 | 127 | 152 |
| 2023 | 120 | 167 |
| 2024 | 146 | 121 |
| 2025 | 107 | 110 |
| 2026 | 42 | 71 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of manufacturing semiconductor device1 Sep 2026US 12,727,183 B2Renesas Electronics Corporation
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Semiconductor device including gate lines with a conductive layer having less nitrogen than an interface layer and method of fabricating the same18 Aug 2026US 12,713,882 B2Samsung Electronics Co., Ltd.
- Radical plasma treatment for semiconductor metal gate stack4 Aug 2026US 12,701,938 B2APPLIED Materials.Inc.
- Graphene device and method of fabricating a graphene device28 Jul 2026US 12,696,467 B2Graphenea Semiconductor SLU
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fluorine-containing plasma treatment in semiconductor process8 Oct 2026US 2026/0314025 A1Texas Instruments Incorporated
- Power mosfet device having a source region embedded via epitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304823 A1Chongqing Alpha and Omega Semiconductor Limited
- Method of manufacturing semiconductor device including thermal treating a dielectric film17 Sep 2026US 2026/0282778 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006
- Method of forming a multilayer dielectric stack677US 6,627,503 B2Sharp Laboratories of America, Inc. · 2003
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006