H10D 64/01334
By defining the insulator using a sidewall spacer mask, a transformation under
Official title: {by defining the insulator using a sidewall spacer mask, a transformation under a mask or a plating at a sidewall}
H10D64/01334 (By defining the insulator using a sidewall spacer mask, a transformation under) appears on 103 US grants and 100 published applications in this corpus.
Search patents in H10D- Granted patents
- 103
- Published applications
- 100
- Assignees
- 37
- Inventors
- 220
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 2 | 2 |
| 2007 | 1 | 2 |
| 2008 | 0 | 0 |
| 2009 | 2 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 2 |
| 2015 | 3 | 6 |
| 2016 | 4 | 6 |
| 2017 | 6 | 8 |
| 2018 | 12 | 14 |
| 2019 | 14 | 9 |
| 2020 | 8 | 11 |
| 2021 | 11 | 13 |
| 2022 | 9 | 5 |
| 2023 | 6 | 3 |
| 2024 | 2 | 8 |
| 2025 | 6 | 8 |
| 2026 | 4 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of manufacturing the same21 Jul 2026US 12,690,432 B2Renesas Electronics Corporation
- Selective High-K formation in gate-last process14 Jul 2026US 12,684,848 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method of gate structure31 Mar 2026US 12,593,663 B2United Microelectronics Corp.
- Backside direct contact formation3 Feb 2026US 12,543,544 B2International Business Machines Corporation
- Replacement gate methods that include treating spacers to widen gate28 Oct 2025US 12,456,623 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with sidewall spacers on field relief dielectric layers2 Apr 2026US 2026/0096171 A1
- Semiconductor structure and method for forming the same4 Dec 2025US 2025/0374628 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Mosfet device structure with air-gaps in spacer and methods for forming the same13 Nov 2025US 2025/0351530 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Replacement Gate Methods That Include Treating Spacers to Widen Gate6 Nov 2025US 2025/0343045 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps233US 5,391,510 AInternational Business Machines Corporation · 1995
- Air-gap gate sidewall spacer and method34US 10,026,824 B1Globalfoundries Inc. · 2018
- Method of defining a line width26US 5,667,632 AMotorola, Inc. · 1997
- Short channel IGFET process25US 4,992,388 AMotorola, Inc. · 1991
- Method of making flash memory with high coupling ratio23US 5,427,970 AUnited Microelectronics Corp. · 1995