Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a first element disposed in a first region and including a first high-dielectric-constant insulating film;
• a second element disposed in a second region;
• and
• an element isolation portion disposed between the first region and the second region, the element isolation portion electrically isolating between the first element and the second element,
• wherein a step portion is formed on a surface of the element isolation portion,
• wherein the semiconductor device comprises a dummy pattern straddling the step portion,
• wherein the dummy pattern includes:
• the first high-dielectric-constant insulating film;
• and
• a conductive film covering an upper surface of the first high-dielectric-constant insulating film,
• wherein the first high-dielectric-constant insulating film is exposed from both side surfaces of the dummy pattern, and
• wherein the semiconductor device comprises a sidewall insulating film covering the first high-dielectric-constant insulating film exposed from the both side surfaces of the dummy pattern.