H10D 64/01336
On single crystalline silicon
Official title: {on single crystalline silicon, e.g. chemical oxidation using a liquid}
H10D64/01336 (On single crystalline silicon) appears on 4,224 US grants and 4,150 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,224
- Published applications
- 4,150
- Assignees
- 615
- Inventors
- 5,618
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 7 | 0 |
| 1978 | 5 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 9 | 0 |
| 1982 | 3 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 6 | 0 |
| 1987 | 5 | 0 |
| 1988 | 12 | 0 |
| 1989 | 12 | 0 |
| 1990 | 9 | 0 |
| 1991 | 9 | 0 |
| 1992 | 18 | 0 |
| 1993 | 20 | 0 |
| 1994 | 22 | 0 |
| 1995 | 31 | 0 |
| 1996 | 28 | 0 |
| 1997 | 32 | 0 |
| 1998 | 56 | 0 |
| 1999 | 113 | 0 |
| 2000 | 141 | 0 |
| 2001 | 193 | 61 |
| 2002 | 170 | 233 |
| 2003 | 206 | 244 |
| 2004 | 242 | 308 |
| 2005 | 203 | 339 |
| 2006 | 228 | 299 |
| 2007 | 184 | 225 |
| 2008 | 158 | 198 |
| 2009 | 138 | 156 |
| 2010 | 149 | 134 |
| 2011 | 158 | 127 |
| 2012 | 112 | 146 |
| 2013 | 114 | 108 |
| 2014 | 135 | 127 |
| 2015 | 145 | 168 |
| 2016 | 160 | 145 |
| 2017 | 107 | 102 |
| 2018 | 91 | 102 |
| 2019 | 128 | 144 |
| 2020 | 114 | 138 |
| 2021 | 108 | 133 |
| 2022 | 99 | 128 |
| 2023 | 93 | 140 |
| 2024 | 118 | 95 |
| 2025 | 87 | 94 |
| 2026 | 33 | 56 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of manufacturing semiconductor device1 Sep 2026US 12,727,183 B2Renesas Electronics Corporation
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Semiconductor device including gate lines with a conductive layer having less nitrogen than an interface layer and method of fabricating the same18 Aug 2026US 12,713,882 B2Samsung Electronics Co., Ltd.
- Radical plasma treatment for semiconductor metal gate stack4 Aug 2026US 12,701,938 B2APPLIED Materials.Inc.
- Method of forming nanosheet field effect transistors with partial inside spacers21 Jul 2026US 12,690,251 B2Adeia Semiconductor Solutions LLC
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Fluorine-containing plasma treatment in semiconductor process8 Oct 2026US 2026/0314025 A1Texas Instruments Incorporated
- Power mosfet device having a source region embedded via epitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304823 A1Chongqing Alpha and Omega Semiconductor Limited
- Epitaxial strontium titanate on silicon10 Sep 2026US 2026/0271631 A1Psiquantum, Corp.
- Semiconductor device and method for fabricating the same20 Aug 2026US 2026/0247677 A1SK hynix Inc.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006
- Method of forming a multilayer dielectric stack677US 6,627,503 B2Sharp Laboratories of America, Inc. · 2003
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006