H10D 64/01346
In a gaseous ambient using an oxygen or a water vapour
Official title: {in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer (H10D64/01344 takes precedence)}
H10D64/01346 (In a gaseous ambient using an oxygen or a water vapour) appears on 746 US grants and 522 published applications in this corpus.
Search patents in H10D- Granted patents
- 746
- Published applications
- 522
- Assignees
- 204
- Inventors
- 1,334
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 4 | 0 |
| 1988 | 5 | 0 |
| 1989 | 5 | 0 |
| 1990 | 4 | 0 |
| 1991 | 6 | 0 |
| 1992 | 14 | 0 |
| 1993 | 11 | 0 |
| 1994 | 11 | 0 |
| 1995 | 16 | 0 |
| 1996 | 14 | 0 |
| 1997 | 12 | 0 |
| 1998 | 18 | 0 |
| 1999 | 33 | 0 |
| 2000 | 38 | 0 |
| 2001 | 55 | 22 |
| 2002 | 46 | 57 |
| 2003 | 50 | 42 |
| 2004 | 40 | 46 |
| 2005 | 43 | 57 |
| 2006 | 34 | 38 |
| 2007 | 42 | 25 |
| 2008 | 24 | 26 |
| 2009 | 10 | 12 |
| 2010 | 22 | 23 |
| 2011 | 25 | 15 |
| 2012 | 11 | 14 |
| 2013 | 11 | 13 |
| 2014 | 13 | 9 |
| 2015 | 17 | 15 |
| 2016 | 13 | 12 |
| 2017 | 5 | 7 |
| 2018 | 8 | 13 |
| 2019 | 13 | 14 |
| 2020 | 12 | 9 |
| 2021 | 11 | 9 |
| 2022 | 5 | 11 |
| 2023 | 6 | 11 |
| 2024 | 10 | 3 |
| 2025 | 7 | 8 |
| 2026 | 2 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing semiconductor device1 Sep 2026US 12,727,183 B2Renesas Electronics Corporation
- Integrated wet clean for gate stack development10 Mar 2026US 12,575,357 B2APPLIED Materials.Inc.
- Manufacturing method of semiconductor structure2 Dec 2025US 12,490,492 B2United Microelectronics Corp.
- Semiconductor device and method of manufacturing the same14 Oct 2025US 12,446,242 B2Renesas Electronics Corporation
- Semiconductor device and method for manufacturing the same7 Oct 2025US 12,438,035 B2Rohm Co., Ltd.
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Power mosfet device having a source region embedded via epitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304823 A1Chongqing Alpha and Omega Semiconductor Limited
- Semiconductor device13 Aug 2026US 2026/0239707 A1Kabushiki Kaisha Toshiba
- Integrated wet clean for gate stack development25 Jun 2026US 2026/0182290 A1APPLIED Materials.Inc.
- Semiconductor Devices and Methods for Manufacturing the Same28 May 2026US 2026/0150368 A1Infineon Technologies Austria AG
Most cited
By later US patents
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same626US 6,297,539 B1Sharp Laboratories of America, Inc. · 2001
- Process for producing zirconium oxide thin films621US 7,754,621 B2ASM International N.V. · 2010
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014