Integrated wet clean for gate stack development

An integrated cluster tool comprising:

• a factory interface including a first transfer robot;
• a wet clean system coupled with the factory interface at a first side of the wet clean system;
• a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system;
• a first transfer chamber coupled with the load lock chamber, wherein the first transfer chamber includes a second transfer robot;
• a thermal treatment chamber coupled with the first transfer chamber;
• a second transfer chamber coupled with the first transfer chamber, wherein the second transfer chamber includes a third transfer robot;
• a metal deposition chamber coupled with the second transfer chamber;
• and
• a controller configured to perform:
• processing a substrate in a wet clean chamber of the wet clean system to remove residual organics and particles from a surface of an oxide formed on the substrate, wherein the substrate comprises a silicon layer, and wherein processing the substrate in the wet clean chamber maintains an amount of moisture on the surface of the oxide until gate formation processing;
• and
• performing the gate formation processing on the substrate directly after processing the substrate in the wet clean chamber, and performing the gate formation processing comprises forming a high-k dielectric material on the surface of the oxide.