Semiconductor Devices and Methods for Manufacturing the Same

A method, comprising:

• forming a trench structure in a first surface of a semiconductor substrate comprising an active area and an edge region that laterally surrounds the active area, wherein the trench structure comprises a base, a plurality of sidewalls, a transverse trench section, and a plurality of longitudinal trench sections, wherein the transverse trench section is located in the edge region and the longitudinal trench sections extend from the transverse trench section into the active area;
• forming a dielectric layer on the base and the side walls of the longitudinal trench sections and the transverse trench section with a thickness tend on the side walls in end portions of the longitudinal trench sections which are located in the edge region and a thickness tact on the side walls in portions of the longitudinal trench sections which are located in the active area, wherein tend is greater than tact.

A method, comprising:

• forming a trench structure in a first surface of a semiconductor substrate of a first conductivity type comprising an active area and an edge region that laterally surrounds the active area, wherein the trench structure comprises a base, sidewalls, a transverse trench section, and a plurality of longitudinal trench sections, wherein the transverse trench section is located in the edge region and the longitudinal trench sections extend from the transverse trench section into the active area;
• and
• selectively implanting dopants of the first conductivity type into the base of the transverse trench section and into the base of an end portion of the plurality of longitudinal trench sections located in the edge region and forming a doped region of the first conductivity type.