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US 12,438,035 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeRohm Co., Ltd.
InventorsMitsuhide Kori, Yuji Matsumoto
Life of this patent
Estimating the term…
Abstract
The semiconductor device includes an Si chip which has a main surface facing a {100} plane, a trench which is formed by digging down the main surface and has an open end extending inclined in a <110> direction side with respect to a <100> direction in a plan view, and an oxide film which is constituted of an oxide of the Si chip and formed as a film on the main surface and at the open end.
Claims20
A semiconductor device comprising:
- an Si chip which has a main surface facing a {100} plane;
- a trench which is formed by digging down the main surface and has an open end extending inclined in a <110> direction side with respect to a <100> direction in a plan view, and which demarcates a device region in the main surface by the open end;
- an oxide film which is constituted of an oxide of the Si chip and formed as a film on the main surface and at the open end in the device region, and which is constituted of a gate oxide film;
- a drain region which is formed in a region on one side with respect to the oxide film in a surface layer portion of the main surface in the device region;
- a source region which is formed in a region on another side with respect to the oxide film in the surface layer portion of the main surface in the device region to define a channel with the drain region;
- and
- a gate electrode which is formed on the oxide film and faces the channel across the oxide film.
4 more elements
A semiconductor device comprising:
- an Si chip which has a main surface facing a {100} plane;
- a trench which is formed by digging down the main surface and has an open end extending inclined in a <110> direction side with respect to a <100> direction in a plan view, and which demarcates a device region in the main surface by the open end;
- and
- an oxide film which is constituted of an oxide of the Si chip and formed as a film on the main surface and at the open end in the device region, and which is constituted of a gate oxide film;
- wherein the trench is formed in a quadrilateral annular shape in a plan view to demarcate the device region by four of the open ends, each of which extends inclined in the <110> direction side with respect to the <100> direction, and
- the oxide film covers at least one of the open ends.
3 more elements
Dependencies are inferred from the claim text.