Back to results
US 7,754,621 B2Granted
Process for producing zirconium oxide thin films
AssigneeASM International N.V.
InventorMatti Putkonen
Life of this patent
Estimating the term…
Abstract
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilized zirconium oxide (YSZ) thin film on a substrate.
Claims23
An atomic layer deposition method for forming a film on a substrate, comprising:
- providing the substrate in a reaction space;
- depositing a zirconium oxide film on the substrate by exposing the substrate in the reaction space to temporally separated pulses of a zirconium-containing material and an oxygen-containing material, wherein the zirconium source material comprises a ligand selected from the group consisting of a cyclopentadienyl and a cyclopentadienyl derivative;
- and
- maintaining the substrate at a temperature below a decomposition temperature of the zirconium-containing material during depositing the zirconium oxide film.
1 more element
Dependencies are inferred from the claim text.