US 2026/0239707 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes first and second electrodes, a semiconductor layer with a first and second semiconductor regions, a third semiconductor region of a first conductivity type, and third and fourth electrodes. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located between the second semiconductor region and the second electrode. The third electrode faces the second semiconductor region via a first insulating region. The fourth electrode is in the first semiconductor region via a second insulating region and is electrically connected to the second electrode. The second insulating region includes a first and second portions located between the first semiconductor region and the fourth electrode in a first direction and a second direction, respectively. A dielectric constant of the second portion is lower than that of the first portion.

Claims20

Dependent claims

A field plate MOSFET semiconductor device comprising:

a first electrode having a main surface that extends along a second direction;
a second electrode;
a semiconductor layer between the first electrode and the second electrode;
a gate electrode at least partially disposed in the semiconductor layer;
a field plate electrode disposed in a region of the semiconductor layer between the gate electrode and the first electrode, the field plate being electrically connected to the second electrode;
and
a field plate insulating region that includes
a first insulating material disposed along a bottom of the field plate electrode oriented along the second direction, and
a second insulating material disposed along at least a portion of a side of the field plate electrode in a first direction perpendicular to the second direction, wherein
a dielectric constant of the second insulating material is lower than a dielectric constant of the first insulating material.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20