Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsJun Sik KIM, Sung Hwan HWANG
Life of this patent
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Abstract
A semiconductor device includes a gate trench formed in a substrate, a gate dielectric layer formed along profile of sidewalls and a bottom surface of the gate trench, first and second gate electrodes that are stacked over the gate dielectric layer to gap-fill a portion of the gate trench, a dipole inducing portion positioned between the second gate electrode and the gate dielectric layer and including a dipole bond and a non-dipole bond, and a capping layer suitable for gap-filling a remaining portion of the gate trench over the dipole inducing portion and the second gate electrode.
Claims10
A method for fabricating a semiconductor device, comprising:
- forming a gate trench in a substrate;
- forming a gate dielectric layer over sidewalls and over a bottom surface of the gate trench;
- forming a first gate electrode over the gate dielectric layer to gap-fill the bottom surface of the gate trench;
- forming a dipole inducing layer including a dipole bond over an exposed surface of the gate dielectric layer;
- forming a second gate electrode over the first gate electrode and the dipole inducing layer to gap-fill a portion of the gate trench;
- etching the dipole inducing layer to the same level as a top surface of the second gate electrode to form a dipole inducing portion;
- performing an impurity ion implantation process for a non-dipole bond onto the dipole inducing portion;
- and
- forming a capping layer to gap-fill a remaining portion of the gate trench over the dipole inducing portion and the second gate electrode.
Dependencies are inferred from the claim text.