H10D 64/01338
With a treatment
Official title: {with a treatment, e.g. annealing, after the formation of the conductor}
H10D64/01338 (With a treatment) appears on 783 US grants and 699 published applications in this corpus.
Search patents in H10D- Granted patents
- 783
- Published applications
- 699
- Assignees
- 174
- Inventors
- 1,332
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 6 | 0 |
| 1996 | 8 | 0 |
| 1997 | 10 | 0 |
| 1998 | 19 | 0 |
| 1999 | 36 | 0 |
| 2000 | 38 | 0 |
| 2001 | 38 | 9 |
| 2002 | 30 | 43 |
| 2003 | 30 | 32 |
| 2004 | 34 | 36 |
| 2005 | 36 | 40 |
| 2006 | 31 | 34 |
| 2007 | 17 | 18 |
| 2008 | 16 | 25 |
| 2009 | 12 | 20 |
| 2010 | 18 | 12 |
| 2011 | 15 | 24 |
| 2012 | 15 | 31 |
| 2013 | 23 | 25 |
| 2014 | 34 | 24 |
| 2015 | 27 | 37 |
| 2016 | 34 | 35 |
| 2017 | 34 | 24 |
| 2018 | 23 | 24 |
| 2019 | 25 | 30 |
| 2020 | 31 | 35 |
| 2021 | 23 | 34 |
| 2022 | 30 | 30 |
| 2023 | 21 | 26 |
| 2024 | 22 | 24 |
| 2025 | 22 | 16 |
| 2026 | 9 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device including gate lines with a conductive layer having less nitrogen than an interface layer and method of fabricating the same18 Aug 2026US 12,713,882 B2Samsung Electronics Co., Ltd.
- Radical plasma treatment for semiconductor metal gate stack4 Aug 2026US 12,701,938 B2APPLIED Materials.Inc.
- Methods for patterning substrates to adjust voltage properties26 May 2026US 12,642,021 B2APPLIED Materials.Inc.
- Semiconductor device comprising oxide semiconductor31 Mar 2026US 12,593,633 B2Semiconductor Energy Laboratory Co.Ltd.
- Integrated circuit metal gate structure and method of fabricating thereof20 Jan 2026US 12,532,531 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Semiconductor device and method for fabricating the same20 Aug 2026US 2026/0247677 A1SK hynix Inc.
- Package structure and method for manufacturing the same2 Jul 2026US 2026/0191012 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for annealing high-k materials4 Jun 2026US 2026/0157157 A1ASM IP Holding B. V.
- Semiconductor devices and methods of manufacturing thereof9 Apr 2026US 2026/0101538 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Atomic layer-deposited hafnium aluminum oxide654US 7,135,421 B2Micron Technology, Inc. · 2006
- Method for tuning the effective work function of a gate structure in a semiconductor device419US 9,076,726 B2Imec · 2015
- Means for stabilizing polycrystalline semiconductor layers175US 4,755,865 AMotorola, Inc. · 1988
- Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits140US 6,063,698 AMotorola, Inc. · 2000
- Process for fabricating a MOSFET device having reduced reverse short channel effects139US 5,552,332 AMotorola, Inc. · 1996