H10D 64/0134
With a treatment
Official title: {with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor}
H10D64/0134 (With a treatment) appears on 1,642 US grants and 1,689 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,642
- Published applications
- 1,689
- Assignees
- 301
- Inventors
- 2,446
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 6 | 0 |
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 8 | 0 |
| 1994 | 5 | 0 |
| 1995 | 9 | 0 |
| 1996 | 15 | 0 |
| 1997 | 13 | 0 |
| 1998 | 19 | 0 |
| 1999 | 33 | 0 |
| 2000 | 46 | 0 |
| 2001 | 69 | 21 |
| 2002 | 54 | 101 |
| 2003 | 90 | 121 |
| 2004 | 114 | 148 |
| 2005 | 85 | 132 |
| 2006 | 90 | 103 |
| 2007 | 86 | 64 |
| 2008 | 56 | 66 |
| 2009 | 46 | 42 |
| 2010 | 44 | 35 |
| 2011 | 44 | 34 |
| 2012 | 30 | 38 |
| 2013 | 25 | 31 |
| 2014 | 35 | 43 |
| 2015 | 50 | 72 |
| 2016 | 57 | 67 |
| 2017 | 50 | 49 |
| 2018 | 43 | 46 |
| 2019 | 61 | 58 |
| 2020 | 46 | 61 |
| 2021 | 51 | 69 |
| 2022 | 44 | 72 |
| 2023 | 50 | 79 |
| 2024 | 66 | 58 |
| 2025 | 50 | 51 |
| 2026 | 21 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Substrate processing method and substrate processing apparatus14 Jul 2026US 12,685,048 B2Tokyo Electron Limited
- Integrating standard-gate transistors and extended-gate transistors on the same substrate using low-temperature gate dielectric treatments7 Jul 2026US 12,677,462 B2International Business Machines Corporation
- Semiconductor device including a transistor having a metal-rich metal oxide layer2 Jun 2026US 12,648,212 B2SK hynix Inc.
- Epitaxial strontium titanate on silicon2 Jun 2026US 12,648,373 B2Psiquantum, Corp.
- Fluorine-containing plasma treatment in semiconductor process8 Oct 2026US 2026/0314025 A1Texas Instruments Incorporated
- Three-dimensional semiconductor devices13 Aug 2026US 2026/0239704 A1Samsung Electronics Co., Ltd.
- Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same16 Jul 2026US 2026/0206268 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structures for semiconductor devices2 Jul 2026US 2026/0190452 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-threshold gate dielectric patterning scheme using individualized gate tubs2 Jul 2026US 2026/0190460 A1Intel Corporation
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006
- Method of forming a multilayer dielectric stack677US 6,627,503 B2Sharp Laboratories of America, Inc. · 2003
- Atomic layer-deposited hafnium aluminum oxide654US 7,135,421 B2Micron Technology, Inc. · 2006