Back to results
US 12,685,048 B2Granted
Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsMasami Oikawa, Yuya Takamura
Life of this patent
Estimating the term…
Abstract
A substrate processing method includes: preparing a substrate having a target film on a surface; forming a barrier film that covers the target film; supplying a deuterium gas and an oxygen gas to the target film covered with the barrier film, thereby implanting deuterium into the target film; and removing the barrier film after the deuterium is implanted into the target film.
Claims20
A substrate processing method comprising:
- preparing a substrate having a target film on a surface;
- forming a barrier film that covers the target film;
- supplying a deuterium gas and an oxygen gas to the target film covered with the barrier film, thereby implanting deuterium into the target film;
- and
- removing the barrier film after the deuterium is implanted into the target film.
2 more elements
A substrate processing apparatus comprising:
- a processing chamber;
- a gas supplier;
- and
- a controller, wherein
- the controller includes a processor, a memory, and a program stored in the memory, wherein the program, when executed, causes the substrate processing apparatus to:
- house a substrate having a target film on a surface in the processing chamber;
- form a barrier film that covers the target film in the processing chamber;
- supply, from the gas supplier, a deuterium gas and an oxygen gas into the processing chamber, thereby implanting deuterium into the target film covered with the barrier film;
- and
- remove the barrier film in the processing chamber after the deuterium is implanted into the target film.
7 more elements
Dependencies are inferred from the claim text.