H10D 64/01342
By deposition
Official title: {by deposition, e.g. evaporation, ALD or laser deposition (H10D64/01344 takes precedence)}
H10D64/01342 (By deposition) appears on 1,988 US grants and 2,012 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,988
- Published applications
- 2,012
- Assignees
- 370
- Inventors
- 2,705
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 6 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 5 | 0 |
| 1996 | 8 | 0 |
| 1997 | 6 | 0 |
| 1998 | 17 | 0 |
| 1999 | 33 | 0 |
| 2000 | 61 | 0 |
| 2001 | 87 | 32 |
| 2002 | 84 | 128 |
| 2003 | 116 | 157 |
| 2004 | 157 | 203 |
| 2005 | 144 | 230 |
| 2006 | 161 | 203 |
| 2007 | 122 | 124 |
| 2008 | 105 | 116 |
| 2009 | 82 | 71 |
| 2010 | 89 | 67 |
| 2011 | 84 | 62 |
| 2012 | 59 | 56 |
| 2013 | 52 | 43 |
| 2014 | 60 | 59 |
| 2015 | 64 | 68 |
| 2016 | 62 | 57 |
| 2017 | 35 | 31 |
| 2018 | 29 | 33 |
| 2019 | 45 | 47 |
| 2020 | 42 | 48 |
| 2021 | 25 | 41 |
| 2022 | 30 | 35 |
| 2023 | 29 | 34 |
| 2024 | 38 | 24 |
| 2025 | 22 | 31 |
| 2026 | 7 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Method of forming nanosheet field effect transistors with partial inside spacers21 Jul 2026US 12,690,251 B2Adeia Semiconductor Solutions LLC
- Epitaxial strontium titanate on silicon2 Jun 2026US 12,648,373 B2Psiquantum, Corp.
- Memory device and method for forming the same21 Apr 2026US 12,610,552 B2National Taiwan Normal University
- Methods for pre-deposition treatment of a work-function metal layer10 Mar 2026US 12,575,154 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Epitaxial strontium titanate on silicon10 Sep 2026US 2026/0271631 A1Psiquantum, Corp.
- Semiconductor device13 Aug 2026US 2026/0239707 A1Kabushiki Kaisha Toshiba
- Method of forming a gate stack including a dielectric layer13 Aug 2026US 2026/0239899 A1ASM IP Holding B. V.
- Selective dipole layers for nanowire field effect transistors2 Jul 2026US 2026/0190473 A1Intel Corporation
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006
- Method of forming a multilayer dielectric stack677US 6,627,503 B2Sharp Laboratories of America, Inc. · 2003
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006