H10D 64/01352
With sacrificial oxide
Official title: {with sacrificial oxide}
H10D64/01352 (With sacrificial oxide) appears on 267 US grants and 268 published applications in this corpus.
Search patents in H10D- Granted patents
- 267
- Published applications
- 268
- Assignees
- 114
- Inventors
- 615
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 5 | 0 |
| 2001 | 7 | 3 |
| 2002 | 16 | 10 |
| 2003 | 13 | 18 |
| 2004 | 18 | 13 |
| 2005 | 8 | 16 |
| 2006 | 9 | 11 |
| 2007 | 12 | 18 |
| 2008 | 5 | 9 |
| 2009 | 9 | 3 |
| 2010 | 8 | 1 |
| 2011 | 7 | 9 |
| 2012 | 2 | 6 |
| 2013 | 7 | 8 |
| 2014 | 3 | 7 |
| 2015 | 12 | 20 |
| 2016 | 16 | 21 |
| 2017 | 17 | 9 |
| 2018 | 7 | 7 |
| 2019 | 12 | 15 |
| 2020 | 8 | 17 |
| 2021 | 13 | 13 |
| 2022 | 13 | 11 |
| 2023 | 9 | 12 |
| 2024 | 11 | 6 |
| 2025 | 6 | 0 |
| 2026 | 2 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method of manufacturing semiconductor structure4 Nov 2025US 12,464,700 B2Changxin Memory Technologies, Inc.
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- Fin field-effect transistor device with composite liner for the fin9 Sep 2025US 12,414,320 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Power mosfet device having a source region embedded via epitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304823 A1Chongqing Alpha and Omega Semiconductor Limited
- Fin field-effect transistor device with composite liner for the fin19 Feb 2026US 2026/0052724 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Stacked gate-all-around finfet and method forming the same15 Jan 2026US 2026/0020280 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing trench mosfet device1 Jan 2026US 2026/0006817 A1MagnaChip Semiconductor, Ltd.
- Extended gate and standard gate integration scheme1 Jan 2026US 2026/0006900 A1International Business Machines Corporation
Most cited
By later US patents
- Method for forming a high dielectric constant material622US 6,448,192 B1Motorola, Inc. · 2002
- Method of depositing barrier layer for metal gates592US 6,858,524 B2ASM International N.V. · 2005
- Multiple gate field-effect transistors having oxygen-scavenged gate stack305US 9,564,489 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Fabricating a semiconductor device with low defect density oxide269US 4,851,370 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1989
- Semiconductor device and method of manufacturing the same156US 6,482,714 B1Kabushiki Kaisha Toshiba · 2002