Fin field-effect transistor device with composite liner for the fin
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yi Kao, Chung-Chi Ko
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Abstract
A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a liner over the fin; performing a surface treatment process to convert an upper layer of the liner distal to the fin into a conversion layer, the conversion layer comprising an oxide or a nitride of the liner; forming isolation regions on opposing sides of the fin after the surface treatment process; forming a gate dielectric over the conversion layer after forming the isolation regions; and forming a gate electrode over the fin and over the gate dielectric.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a fin protruding above a substrate;
- forming a liner over the fin, wherein the liner extends continuously from a first sidewall of the fin to a second opposing sidewall of the fin;
- converting an upper layer of the liner distal from the fin into a conversion layer by performing a surface treatment process;
- forming isolation regions on opposing sides of the fin after the surface treatment process;
- and
- forming a gate structure over the fin and over the isolation regions.
A method of forming a semiconductor device, the method comprising:
- forming a first fin in a first device region of the semiconductor device, the first fin comprising a first semiconductor material;
- forming a liner over the first fin, the liner comprising a second semiconductor material different from the first semiconductor material;
- converting an exterior layer of the liner distal from the first fin into a first dielectric layer, wherein an interior layer of the liner contacting the first fin remains the first semiconductor material after converting the exterior layer;
- forming isolation regions around the first fin, wherein the first fin protrudes above the isolation regions;
- forming a gate dielectric over the first fin;
- and
- forming a gate electrode over the first fin and the gate dielectric.
A method of forming a semiconductor device, the method comprising:
- forming a fin protruding above a substrate;
- forming a liner over the fin, wherein the liner extends continuously along a first sidewall of the fin, a top surface of the fin, and a second opposing sidewall of the fin;
- performing a surface treatment process to the liner, wherein the surface treatment process converts an upper layer of the liner distal from the fin into a conversion layer, wherein a lower layer of the liner contacting the fin remains unchanged by the surface treatment process;
- after performing the surface treatment process, forming isolation regions on opposing sides of the fin;
- forming a dummy gate structure over the fin and over the isolation regions;
- forming an interlayer dielectric layer over the fin and around the dummy gate structure;
- and
- replacing the dummy gate structure with a replacement gate structure.
Dependencies are inferred from the claim text.