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AssigneeAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorsRaymond H. Doklan, Edward P. Martin, Jr., Pradip K. Roy, Scott F. Shive, Ashok K. Sinha
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Low defect density oxides suitable for use as thin gate oxides or in charge storage capacitors are described. First and second layers are formed on a substrate with misaligned defect structures. A third layer is then grown by diffusing a species through the first and second layers to the substrate. The species reacts with the substrate. The low defect density results from the misaligned defect structure of the first and second layers. In one embodiment, the first and second layers are grown and deposited oxides, respectively. The third layer is grown by diffusing oxygen through the first two layers and the interface between the first and second layers acts as a sink trapping defects. The oxide silicon interface has desirable characteristics because the oxide grows in near equilibrium conditions.
A method of fabricating an integrated circuit comprising a thin, planar, oxide layer grown on a substrate, with an essentially stress-free interface formed therebetween, the method comprising the steps of:
Dependencies are inferred from the claim text.