Method for forming a high dielectric constant material

A method for semiconductor processing, comprising:

• providing a semiconductor substrate having a silicon oxide layer comprising a plurality of monolayers;
• providing a reaction chamber;
• placing the semiconductor substrate into the reaction chamber;
• introducing a first gas into the reaction chamber;
• purging the reaction chamber of the first gas;
• introducing a second gas into the reaction chamber to cause removal of a first monolayer of the plurality of monolayers;
• and
• repeating introducing the first gas, purging, and introducing the second gas until a predetermined amount of the silicon oxide layer is removed.

A method for semiconductor processing, comprising:

• providing a semiconductor substrate having a silicon oxide layer comprising a plurality of monolayers;
• providing a reaction chamber;
• placing the semiconductor substrate into the reaction chamber;
• plurality of monolayers;
• and
• repeating introducing the first gas, purging, and heating until a predetermined amount of the silicon dioxide layer is removed.

A method of forming a transistor, comprising:

• providing a semiconductor substrate;
• providing a reaction chamber,
• forming a semiconductor oxide on the substrate, wherein the semiconductor oxide layer comprises a plurality of monolayers;
• placing the semiconductor substrate with the semiconductor oxide layer into the reaction chamber;
• after inserting the semiconductor substrate into the reaction chamber, introducing a first gas into the reaction chamber;
• purging the reaction chamber of the first gas;
• after purging the reaction chamber, introducing a second gas into the reaction chamber to cause etching of a first monolayer of the plurality of monolayers;
• repeating introducing the first gas, purging, and introducing the second gas until a predetermined amount of the semiconductor oxide layer is removed to leave an interfacial layer of semiconductor oxide layer on the semiconductor substrate;
• depositing a layer of high dielectric constant material over the interfacial layer;
• forming a gate electrode over the layer of high dielectric constant material;
• and
• forming a source and a drain in the semiconductor substrate and adjacent to the gate electrode.

A method of forming a transistor, comprising:

• providing a semiconductor substrate;
• providing a reaction chamber,
• forming a semiconductor oxide layer on the substrate, wherein the semiconductor oxide layer comprises a plurality of monolayers;
• inserting the semiconductor substrate with the semiconductor oxide layer into the reaction chamber;
• after inserting the semiconductor substrate into the reaction chamber, introducing a first gas into the reaction chamber;
• purging the reaction chamber of the first gas;
• after purging the reaction chamber, introducing a second gas into the reaction chamber to cause the etching of a first monolayer of the plurality of monolayers;
• repeating introducing the first gas, purging, and introducing the second gas until a desired amount of the semiconductor oxide layer is removed to leave an interfacial layer of semiconductor oxide layer on the semiconductor surface;
• depositing a layer of high dielectric constant material over the interfacial layer;
• forming a gate electrode over the layer of high dielectric constant material;
• and
• forming a source and a drain adjacent in the semiconductor substrate and adjacent to the gate electrode.

A method for semiconductor processing, comprising:

• providing a semiconductor substrate having a silicon oxide layer over the substrate, wherein the silicon oxide layer comprises a plurality of monolayers;
• providing a reaction chamber;
• inserting the semiconductor substrate into the reaction chamber;
• introducing a first gas into the reaction chamber to form a reaction layer on the silicon oxide;
• purging the reaction chamber of the first gas;
• activating the reaction layer to remove a first monolayer of the plurality of monolayers;
• and
• repeating introducing, purging, and activating until a desired portion of the silicon oxide layer has been removed.