Selective deposition on metals using porous low-k materials

A method comprising:

• forming alternating layers of a porous dielectric material and a first conductive material;
• patterning the alternating layers of the porous dielectric material and the first conductive material;
• depositing hydroxamic acid (HA) material over the alternating layers of the porous dielectric material and the first conductive material, the HA material deposited over the first conductive material forming a surface aligned monolayer (SAM);
• applying irradiation to one or more portions of the first conductive material to produce SAM HA cross-linking;
• selectively growing an oxide material over the SAM on the first conductive material including a non-irradiated portion of the SAM;
• depositing a dielectric layer adjacent the oxide material;
• removing the non-irradiated portion of the SAM and the oxide material;
• and
• depositing a second conductive material on the first conductive material defining a bottom electrode.