Graphene device and method of fabricating a graphene device

A method of fabricating a graphene-based solid-state device, the method including the following steps:

• disposing a graphene layer on a substrate;
• depositing a first layer of a sacrificial material on the graphene layer,
• the first layer of a sacrificial material being made of a first oxide dielectric material;
• patterning the graphene layer by defining at least one channel region, wherein
• the patterning is done by applying a lithographic process followed by an etching process;
• depositing a second layer of a sacrificial material on a stacked structure,
• the second layer of a sacrificial material being made of a second oxide dielectric material different of the first oxide dielectric material of which the first layer of a sacrificial material is made;
• and wherein
• the selectivity to at least one etchant of the first oxide dielectric material is different from the selectivity to said at least one etchant of the second oxide dielectric material;
• defining contact areas on which metal will be subsequently deposited;
• etching away portions of the second and first layers of sacrificial material, thus defining hollow portions through which graphene areas are exposed, and
• in a single deposition stage, applying metal depositions on the defined contact areas.