H10D 64/01348
With substrate doping
Official title: {with substrate doping, e.g. N, Ge or C implantation, before formation of the insulator}
H10D64/01348 (With substrate doping) appears on 198 US grants and 170 published applications in this corpus.
Search patents in H10D- Granted patents
- 198
- Published applications
- 170
- Assignees
- 75
- Inventors
- 441
- Latest grant
- 10 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 5 | 0 |
| 2000 | 13 | 0 |
| 2001 | 11 | 3 |
| 2002 | 14 | 15 |
| 2003 | 11 | 7 |
| 2004 | 9 | 8 |
| 2005 | 10 | 9 |
| 2006 | 7 | 7 |
| 2007 | 3 | 6 |
| 2008 | 3 | 7 |
| 2009 | 4 | 6 |
| 2010 | 5 | 6 |
| 2011 | 10 | 9 |
| 2012 | 6 | 11 |
| 2013 | 9 | 6 |
| 2014 | 6 | 7 |
| 2015 | 11 | 12 |
| 2016 | 9 | 6 |
| 2017 | 6 | 6 |
| 2018 | 4 | 4 |
| 2019 | 8 | 8 |
| 2020 | 6 | 11 |
| 2021 | 7 | 3 |
| 2022 | 5 | 6 |
| 2023 | 5 | 3 |
| 2024 | 2 | 1 |
| 2025 | 2 | 0 |
| 2026 | 0 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Method for forming high dielectric constant metal oxides269US 6,020,024 AMotorola, Inc. · 2000
- Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation126US 5,596,218 ADigital Equipment Corporation · 1997
- Method of controlling gate oxide thickness in the fabrication of semiconductor devices87US 5,330,920 ADigital Equipment Corporation · 1994
- Anisotropic formation process of oxide layers for vertical transistors82US 6,429,148 B1ProMOS Technologies Inc. · 2002
- Method for forming a thin dielectric layer on a substrate79US 5,268,311 AInternational Business Machines Corporation · 1993