Method for forming a thin dielectric layer on a substrate
AssigneeInternational Business Machines Corporation
InventorsWolfgang Euen, Dieter Hagmann, Hans-Jurgen Wildau
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Abstract
Disclosed is a thin dielectric inorganic layer overlaying a substrate, and having a thickness of.ltoreq. about 20 nm and a defect density of.ltoreq. about 0.6 defects/cm.sup.2 determined by BV measurements. Also disclosed is a method of forming such a layer, according to which a layer having the desired composition and thickness is formed on a substrate, followed by an ion implantation into the substrate through the layer with a dose of.gtoreq. about 10.sup.15 ions/cm.sup.2 and a subsequent anneal at a temperature of.gtoreq. about 500.degree. C. for a predetermined time.
Claims3
A method for forming a dielectric inorganic layer, comprising the steps of:
- forming on a substrate a dielectric inorganic layer having a thickness .ltoreq. about 20 nm, said layer consisting essentially of a material selected from the group consisting of silicon dioxide, silicon monoxide and silicon nitride, implating ions into said substrate through said layer with a does of .ltoreq. about 10.sup.15 /cm.sup.2, wherein said ions are implanted with an energy such that the projected range exceeds the thickness of said layer, and annealing said layer in an inert atmosphere at a temperature of .gtoreq. about 500.degree. C. for a predetermined time, so as to produce a resulting layer having a defect density of .ltoreq.0.6 defects/cm.sup.2.
Dependencies are inferred from the claim text.