High voltage semiconductor device including buried oxide layer
AssigneeUnited Microelectronics Corp.
InventorsSheng-Yao Huang, Yu-Ruei Chen, Zen-Jay Tsai, Yu-Hsiang Lin
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Abstract
A semiconductor device includes a substrate, a buried oxide layer in the substrate and near a surface of the substrate, a gate dielectric layer on the substrate and covering the buried oxide layer, a gate structure disposed on the gate dielectric layer and overlapping the buried oxide layer, a source region and a drift region in the substrate and respectively at two sides of the gate structure, wherein the drift region partially covers a lower edge of the buried oxide layer and exposes a side edge of the buried oxide layer, and a drain region in the drift region.
Claims10
A semiconductor device, comprising:
- a substrate;
- a buried oxide layer in the substrate and near a surface of the substrate;
- a gate dielectric layer on the substrate and covering the buried oxide layer;
- a gate structure disposed on the gate dielectric layer and overlapping the buried oxide layer;
- a source region and a drift region in the substrate and respectively at two sides of the gate structure, wherein the drift region partially covers a lower edge of the buried oxide layer and exposes a side edge of the buried oxide layer under the gate structure;
- and
- a drain region in the drift region.
Dependencies are inferred from the claim text.