Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation

A complementary metal-oxide semiconductor comprising:

• a silicon substrate, said silicon substrate having a plurality of doped regions disposed therein;
• a first oxide layer disposed on a surface of said silicon substrate between a first source and drain pair disposed within said silicon substrate and consisting essentially of silicon dioxide and nitrogen atoms diffused throughout and being substantially free of a formation of Si.sub.3 N.sub.4, said silicon substrate and said first oxide layer having the highest concentration of nitrogen atoms being in a range of at least 5.times.10.sup.11 /cm.sup.2 to 1.times.10.sup.12 /cm.sup.2 and occurring in a region encompassing an interface between said silicon substrate and said first oxide layer, said region extending substantially from a depth of 1000 angstroms in said silicon substrate to a level in said first oxide layer which is approximately ten to twenty percent of the thickness of said first oxide layer;
• a second oxide layer disposed on a surface of said silicon substrate in a region spanning the separation between a second source and drain pair disposed within said silicon substrate and consisting essentially of silicon dioxide and nitrogen atoms diffused throughout and being substantially free of a formation of Si.sub.3 N.sub.4, said second source and drain pair being further disposed within a well disposed within said silicon substrate and having doped characteristics opposite to said second source and drain pair, said silicon substrate and said second oxide layer having the highest concentration of nitrogen atoms being in a range of approximately 1.times.10.sup.11 /cm.sup.2 to 1.times.10.sup.12 /cm.sup.2 and occurring in a second region encompassing an interface between said silicon substrate and said second oxide layer, said region extending substantially from a depth of 1000 angstroms in said silicon substrate to a level in said second oxide layer which is approximately ten to twenty percent of the thickness of said second oxide layer.